Document Details

Document Type : Thesis 
Document Title :
Analysis of I-V-T Measurements on GaAs Resonant Tunneling Diodes
تحليل قياسات I-V-T لمادة جاليوم ارسينايت للرنين النفقي للصمام الثنائي
 
Subject : Quantum wells 
Document Language : English 
Abstract : GaAs/AlAs double barrier resonant tunneling diodes have been studied by I-V-T measurements over the temperature range 77K-350K. No resonant tunneling peaks or Negative Differential Resistance regions (NDR) was observed. This has been attributed to poor material's quality which has a high degree of defects. These tend to destroy coherent tunneling and reduce peak to valley ratio. The I-V-T characteristics have been analyzed on the basis of forward currents in a Schottky diode. It is found that the Richardson's plots follow a modified relationship indicator of a Thermionic-Field-Emission (T.F.E.) from the emitter into the barrier. The ideality factor (n) dependence on temperature has been studied in the basis of T_0 effect. I-V-T data analyzed of the basis of a Gaussian distribution indicates then the mean barrier height varies between 0.28eV to 0.34eV 
Supervisor : farg saeeed alhazmi 
Thesis Type : Master Thesis 
Publishing Year : 1431 AH
2010 AD 
Number Of Pages : 117 
Added Date : Wednesday, November 19, 2014 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
اهداب سعيد القرشيALGORASHE, AHDAB SAEEDInvestigatorMaster 

Files

File NameTypeDescription
 37538.pdf pdf 

Back To Researches Page