Document Details

Document Type : Thesis 
Document Title :
Study of the Effect of Irradiation on Structural and Electrical Properties of (Bi2Se3 – Si) (Bismuth Selenide - Silicon Junction Thin Films)
دراسة أثر التشعيع على الخصائص التركيبية و الكهربية للوصلات الثنائية من الأغشية الرقيقة لسيلينيد البزموث والسيليكون (Bi2Se3 – Si)
 
Subject : ELECTRONIC ENGINEERING 
Document Language : Arabic 
Abstract : The object of this thesis was devoted to study the crystal structure and electrical transport properties of Bismuth Selenid thin film. For this purpose, high purity Bi2Se3 is thermally evaporated from molybdenum boat in a vacum of 10-5 Torr, on to glass substitutes for structure and electrical transport measurements. The X-ray diffraction patterns of powder Bi2Se3 showed polycrystalline structure of Hexagonal phase with lattice constants of: a = 4.143 Å , c = 28.620 Å The X-ray diffraction patterns on Bi2Se3 thin films showed the crystal structure of Hexagonal system and they have prefer orientation (015) and (006). The annealing effect showed an increase in the degree of crystallinity. The effect of gamma irradiation an Bi2Se3 thin film was studied at doses of 50,200,500 kgy. The X-ray diffraction patterns of Bi2Se3 thin films showed the degree of crystallinity increase as the doses increase. The electrical transport properties such as electrical resistivity ρ was studied for films of different thickneses as deposited. It was found that for Bi2Se3 films the electrical conductivity is strongly affected by the sample temperature, the heat treatment and film thickness. Bi2Se3 films showed semiconducting behaviour. The dependence of electrical resistivity on film thickness showed that the electrical resistivity decreases as the film thickness increases. The tow activation energies ΔE1, ΔE2 of the free charge carriers for Bi2Se3 samples was calculated using the electrical resistivity data at different temperature for different thickneses. It was found that the activation energy decrease as the film thickness increases. The current-voltage characteristics of n-Bi2Se3 / p-Si and n- Bi2Se3 / n-Si heterojunctions were studied throughout this study and some of the following parameters were: 1. The rectification ration R.R. 2. Series resistance Rs and short circuit resistance Rsh. 3. Reverse saturation current Is. 4. Diode quality factor n`. 5. Barrier height φb. Finally, the current-voltage characteristics of n-Bi2Se3 / p-Si and n- Bi2Se3 / n-Si heterojunctions were studied after irradiation at doses 10, 50 kgy. It was found that the electrical conductivity increases as the doses increases. 
Supervisor : Fatma Salem Bahabry 
Thesis Type : Master Thesis 
Publishing Year : 1430 AH
2009 AD 
Number Of Pages : 222 
Added Date : Monday, September 9, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
رباب رياض باهبلريBahabry, Rabab RiyadInvestigatorMaster 

Files

File NameTypeDescription
 35957.pdf pdf 
 35958.pdf pdf 
 35959.pdf pdf 
 35960.pdf pdf 
 35961.pdf pdf 

Back To Researches Page